STH185N10F3-6
￥0.00
MOSFET N-CH 100V 180A H2PAK-6
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 114.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6665 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-6 |
| Package/ Case | TO-263-7, D2Pak (6 Leads + Tab) |
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STMicroelectronics 單 FET、MOSFET 產(chǎn)品 STH185N10F3-6
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