
參數名稱 | 參數值 |
---|---|
Product Status | Not For New Designs |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms |
Resistor - Emitter Base (R2) | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package/ Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
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ROHM Semiconductor 雙極晶體管陣列,預偏置 產品 EMB9T2R
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